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DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23002U NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES * Very high power gain * Internal input prematching network * Diffused emitter ballasting resistors improve ruggedness * Interdigitated emitter-base structure * Gold metallization with barrier layer to prevent electromigration and gold diffusion during life * Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS Common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view
MAM131
PTB23002U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2.3 VCC (V) 28 PL (W) >2 Gp (dB) >9 C (%) >45 Zi; ZL () see Figs 5 and 6
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1 c
b
e
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t 10 s; note 1 Tmb = 75 C CONDITIONS open emitter open base RBE = 0 open collector - - - - - - -65 - - MIN.
PTB23002U
MAX. 40 15 40 3 0.25 5 +200 200 235 V V V V A W
UNIT
C C C
MGA243
MGA244
8 handbook, halfpage Ptot (W) 6
handbook, halfpage
3
PL (W)
2
4
1 2
0 -50
0 0 50 100 150 250 200 Tmb (oC) 0 100 200 300 Pi (mW) 400
Ptot max = 5 W.
Fig.2
Maximum power dissipation derating as a function of mounting base temperature.
Fig.3 Output power as a function of input power.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO IEBO PARAMETER collector-base breakdown voltage collector cut-off current emitter cut-off current CONDITIONS IC = 1 mA; IE = 0 VCE = 30 V; IE = 0 VEB = 1.5 V; IC = 0 40 40 - - MIN. - - PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 75 C note 1
PTB23002U
MAX. 22 0.7
UNIT K/W K/W
MAX. V V
UNIT
collector-emitter breakdown voltage IC = 1 mA; RBE = 0
15 1.5
A A
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common-base test circuit as shown in Fig.4 and working in CW class C mode. MODE OF OPERATION Class C (CW) 2.3 f (GHz) 28 VCC (V) PL (W) 2; typ. 2.3 Gp (dB) 9; typ. 9.6 C (%) 45; typ. 50 Zi; ZL () see Figs 5 and 6
List of components (see Fig.4) COMPONENT L1, L2 C1 C2 C3 DESCRIPTION 3 turns 0.5 mm diameter copper wire feedthrough bypass capacitor DC blocking capacitor tuning capacitor 100 pF 0.5 - 5 pF Tekelec 5855 VALUE DIMENSIONS int.dia. = 2 mm Erie, ref.1250-003 CATALOGUE NO.
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
handbook, full pagewidth
30 mm
30 mm
1 10 5.25 1.7 17 40 mm 2.24 1.4 5 4
10
5
5
2
5
13 40 mm
3.5
4
5.5 5 3
2.24
MCD612
handbook, full pagewidth
VCC C1
L2 input L1 C2 output
C3
MCD613
Substrate: PTFE fibreglass. Thickness: 0.8 mm. Permittivity: r = 2.54.
Fig.4 Prematching test circuit.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
1
handbook, full pagewidth
0.5
2
0.2
2.3 GHz
5 10
+j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10
0.5 1 VCC = 28 V; Zo = 50 ; PL = 2.3 W.
2
MCD615
Fig.5 Input impedance as a function of frequency.
1
handbook, full pagewidth
0.5
2
2.3 GHz 0.2 5 10 +j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10
0.5 1 VCC = 28 V; Zo = 50 ; PL = 2.3 W.
2
MCD614
Fig.6 Optimum load impedance as a function of frequency.
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE
PTB23002U
handbook, full pagewidth
0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max
1.7 max
3.2 2.9
5.1
5.5 max
3.4 2 2.0 7.1 14.2
(1)
4.5 min
MBC888
Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3 (1) Flatness of this area ensures full thermal contact with bolt head.
Fig.7 SOT440A.
1997 Feb 19
7
Philips Semiconductors
Product specification
NPN microwave power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PTB23002U
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
NOTES
PTB23002U
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
NOTES
PTB23002U
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
NOTES
PTB23002U
1997 Feb 19
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01721

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